A W-band wideband power amplifier using out-of-phase divider in 0.13-μm SiGe BiCMOS
نویسندگان
چکیده
منابع مشابه
A Q-Band Frequency Synthesizer in 0.13 μm SiGe BiCMOS
In this paper, a 42GHz frequency synthesizer fabricated with 0.13μm SiGe BiCMOS technology is presented, which consists of an integer-N fourth-order type-II phase locked loop (PLL) with a LC tank VCO and a frequency doubler. The core PLL has three-stage current mode logic (CML) and five stage true single phase clock (TSPC) logic in the frequency divider. Meanwhile, a novel balanced common-base ...
متن کاملDesign and Analysis of a W-Band Detector in 0.18-μm SiGe BiCMOS
This paper presents the analysis, design and implementation of a millimeter-wave W-band power detector. Fabricated in a 0.18-μm SiGe BiCMOS technology, the detector circuit exhibits a responsivity of 91 kV/W, a noise equivalent power of 0.5 pW/Hz, and a noise figure of 29 dB. The power dissipation of the detector is 75 μW. Reasonable agreement between simulations and measurements is obtained. T...
متن کاملAn 8 – 18 GHz Wideband SiGe BiCMOS Low Noise Amplifier
In this paper, an 8 – 18 GHz wideband low noise amplifier (LNA) with an active balun fabricated in a 0.13-μm SiGe BiCMOS technology was presented. The LNA achieves 16dB of gain with 1.5 dB variation over the 8GHz to 18 GHz frequency band and a matched input with less than -9 dB of reflection. The minimum noise figure (NF) is 5 dB at 8GHz and increases to 6 dB at 18GHz. The measured IIP3 is -15-...
متن کاملRealization of a Low Noise Amplifier using 0.35 μm SiGe-BiCMOS Technology for IEEE 802.11a Applications
.................................................................................................... viii Özet ............................................................................................................... ix Chapter
متن کاملA W-band Simultaneously Matched Power and Noise Low Noise Amplifier Using CMOS 0.13µm
A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Science China Information Sciences
سال: 2018
ISSN: 1674-733X,1869-1919
DOI: 10.1007/s11432-017-9443-1